A Soft Error Study on Tri-gate based FinFET and Junctionless-FinFET 6T SRAM Cell – A Comparison
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: TELKOMNIKA (Telecommunication Computing Electronics and Control)
سال: 2016
ISSN: 2302-9293,1693-6930
DOI: 10.12928/telkomnika.v14i4.3458